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NCE 80TD65 IGBT MOSFET Power Semiconductor

$9.00 $10.00

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SKU: HXH392976658

NCE 80TD65: A Powerful and Versatile Solution

The NCE 80TD65 MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a high-performance power semiconductor designed to meet the demands of modern power electronics applications. With its fast switching speed, high current capacity, and low on-state voltage, the NCE 80TD65 is an ideal choice for a wide range of applications, including:

  • Motor control
  • Power supplies
  • Inverters
  • Solar power systems
  • Uninterruptible power supplies (UPS)

Key Benefits of the NCE 80TD65 MOSFET

  • Fast switching speed for efficient power conversion
  • High current capacity to handle demanding loads
  • Low on-state voltage for reduced power losses
  • Rugged construction for reliability and durability
  • Wide operating temperature range for versatile applications

Technical Specifications

Parameter Value
Drain-Source Breakdown Voltage (VDS(max)) 800 V
Drain Current (ID) 65 A
On-Resistance (RDS(on)) 0.18 (type)
Input Capacitance (Ciss) 1500 pF
Junction Temperature (Tj) -40C to +150C

Package Includes

  • 1 x G60N100 IGBT

Shipping Info Standard Shipping
Cost: $25/Free Shipping We offer free shipping on orders over $30. Please check the free - shipping eligibility at checkout.
Delivery Time: It usually takes [3-5] business days for standard shipping. Please note that this is an estimated time frame and may be affected by local holidays, and unforeseen circumstances.

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